型号 SI7844DP-T1-GE3
厂商 Vishay Siliconix
描述 MOSFET DL N-CH 30V PPAK 8-SOIC
SI7844DP-T1-GE3 PDF
代理商 SI7844DP-T1-GE3
产品目录绘图 8-SOIC Mosfet Package
标准包装 3,000
FET 型 2 个 N 沟道(双)
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 6.4A
开态Rds(最大)@ Id, Vgs @ 25° C 22 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大) 2.4V @ 250µA
闸电荷(Qg) @ Vgs 20nC @ 10V
功率 - 最大 1.4W
安装类型 表面贴装
封装/外壳 PowerPAK? SO-8
供应商设备封装 PowerPAK? SO-8
包装 带卷 (TR)
产品目录页面 1663 (CN2011-ZH PDF)
其它名称 SI7844DP-T1-GE3TR
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